Prestations de service
Our research explores how materials synthesis, interface engineering, and device design can be integrated to unlock the potential of two-dimensional materials. I am particularly interested in developing experimentally grounded approaches that connect fundamental materials science with scalable technologies. Our work spans four complementary directions: novel growth methodologies, interface-engineered transistors, energy-efficient computing devices, and chiral nanomaterials.
Nom du service
Our group develop unconventional synthesis strategies for producing high-quality two-dimensional materials over technologically relevant areas. Our recent work has examined how van der Waals confinement reshapes the mechanical and electronic landscape at a growth interface. This perspective extends conventional descriptions based on adsorption and diffusion by considering how interfacial forces may actively participate in chemical transformations—an emerging concept that we describe as van der Waals mechanochemistry.
Looking ahead, we aim to establish broadly applicable methodologies for interface-mediated and confined growth. By combining mechanochemical concepts with rational substrate design and controlled reaction environments, we seek to improve control over nucleation, phase formation, thickness, and spatial uniformity. The long-term objective is to enable scalable synthesis of two-dimensional quantum materials and heterostructures whose properties can be engineered during growth rather than corrected after fabrication.
Detailed publications:
[1] Y. Wang, “Resolving the Interfacial Mechanical Landscape of Monolayer NbSe₂ Grown by Confined Epitaxy,” arXiv preprint, 2026.
arXiv:2610.10725
[2] M. Liebregts and Y. Wang*, “Two-Dimensional Materials toward CMOS-Compatible Scalable Quantum Hardware,” arXiv preprint, 2026.
arXiv:2609.16172
[3] J. Lim, J.-I. Lee, Y. Wang, N. Gauriot, M. Chhowalla, C. Schnedermann, and A. Rao, “Photoredox Phase Engineering of Transition Metal Dichalcogenides,” Nature 633, 83–89 (2024).
DOI: 10.1038/s41586-024-07872-5
Nom du service
Our group develops interface-engineering strategies for transistors based on two-dimensional materials. We investigate how molecular functionalization, dielectric substrates, electrical contacts, and thermal pathways influence charge injection, carrier transport, device variability, and heat dissipation. By connecting atomic-scale interfacial interactions with device-level performance, we aim to establish practical design principles for reliable and highly integrated 2D electronics.
Electrothermal Engineering of Vertically Integrated Devices
As transistor architectures become increasingly three-dimensional, electrical and thermal behaviour can no longer be optimized independently. Our recent work on two-dimensional complementary field-effect transistors examines how device geometry, contacts, interconnects, and heat-removal pathways jointly determine operating temperature and electrical performance. The analysis explicitly evaluates thermal improvements against their electrical costs, providing a framework for designing vertically stacked devices under realistic constraints.
Looking ahead, I aim to connect molecular-scale interface control with device- and architecture-level engineering. By combining interface chemistry, electrical and optical characterization, and electrothermal modelling, I seek to establish predictive design principles for scalable two-dimensional transistors and integrated circuits.
Detailed publications:
[1] Y. Zhu, Z. Zhang, Y. Wang, S. Sarkar, Y. Li, H. Yan, L. Ishibe-Veiga, A. Bagri, Z. J. Yang, H. Ramsden, G. Eda, R. L. Z. Hoye, Y. Wang, and M. Chhowalla, “Effect of Substrate on Sulfur Vacancy Defect-Mediated Photoluminescence in Two-Dimensional MoS₂,” The Journal of Physical Chemistry C 129, 8294–8302 (2025).
DOI: 10.1021/acs.jpcc.4c08491
[2] K. K. Paul, C. Chosy, S. Sarkar, Z. Li, H. Yan, Y. Wang, L. Loh, L. Liu, H. Y. Jeong, S. D. Stranks, Y. Wang, and M. Chhowalla, “High-Efficiency WSe₂ Photovoltaics Enabled by Ultra-Clean van der Waals Contacts,” arXiv preprint (2025).
arXiv:2506.14733
[3] M. A. Ghani, S. Sarkar, Y. Li, Y. Wang, K. Watanabe, T. Taniguchi, Y. Wang, and M. Chhowalla, “Ferroelectric Field-Effect Transistors Based on Two-Dimensional CuInP₂S₆ and Graphene Heterostructures,” MRS Energy & Sustainability 11, 616–623 (2024).
DOI: 10.1557/s43581-024-00109-y
[4] M.-H. Kim, K. Sharma, S. Zhang, and Y. Wang*, “AI for Science with GPT-6 Astra: Thermal Design and Electrothermal Analysis of 2D CFET,” arXiv preprint (2026).
arXiv:2609.17123
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Nom du service
Décrivez votre service ici. Qu’est-ce qui le rend génial ? Utilisez un texte court et accrocheur pour expliquer aux gens ce que vous proposez et les avantages dont ils bénéficieront. Une bonne description met les lecteurs dans l’ambiance et les rend plus susceptibles de réserver.