Research
Our research explores how materials synthesis, interface engineering, and device design can be integrated to unlock the potential of two-dimensional materials. I am particularly interested in developing experimentally grounded approaches that connect fundamental materials science with scalable technologies. Our work spans four complementary directions: novel growth methodologies, interface-engineered transistors, energy-efficient computing devices, and chiral nanomaterials.
Novel Methodologies for Large-Area Growth of 2D Materials
Our group develop unconventional synthesis strategies for producing high-quality two-dimensional materials over technologically relevant areas. Our recent work has examined how van der Waals confinement reshapes the mechanical and electronic landscape at a growth interface. This perspective extends conventional descriptions based on adsorption and diffusion by considering how interfacial forces may actively participate in chemical transformations—an emerging concept that we describe as van der Waals mechanochemistry.
Looking ahead, we aim to establish broadly applicable methodologies for interface-mediated and confined growth. By combining mechanochemical concepts with rational substrate design and controlled reaction environments, we seek to improve control over nucleation, phase formation, thickness, and spatial uniformity. The long-term objective is to enable scalable synthesis of two-dimensional quantum materials and heterostructures whose properties can be engineered during growth rather than corrected after fabrication.
Detailed publications:
[1] Y. Wang, “Resolving the Interfacial Mechanical Landscape of Monolayer NbSe₂ Grown by Confined Epitaxy,” arXiv preprint, 2026.
arXiv:2610.10725
[2] M. Liebregts and Y. Wang*, “Two-Dimensional Materials toward CMOS-Compatible Scalable Quantum Hardware,” arXiv preprint, 2026.
arXiv:2609.16172
[3] J. Lim, J.-I. Lee, Y. Wang, N. Gauriot, M. Chhowalla, C. Schnedermann, and A. Rao, “Photoredox Phase Engineering of Transition Metal Dichalcogenides,” Nature 633, 83–89 (2024).
DOI: 10.1038/s41586-024-07872-5
Interface Engineering of 2D-Material-Based Transistors
Our group develops interface-engineering strategies for transistors based on two-dimensional materials. We investigate how molecular functionalization, dielectric substrates, electrical contacts, and thermal pathways influence charge injection, carrier transport, device variability, and heat dissipation. By connecting atomic-scale interfacial interactions with device-level performance, we aim to establish practical design principles for reliable and highly integrated 2D electronics.
Electrothermal Engineering of Vertically Integrated Devices
As transistor architectures become increasingly three-dimensional, electrical and thermal behaviour can no longer be optimized independently. Our recent work on two-dimensional complementary field-effect transistors examines how device geometry, contacts, interconnects, and heat-removal pathways jointly determine operating temperature and electrical performance. The analysis explicitly evaluates thermal improvements against their electrical costs, providing a framework for designing vertically stacked devices under realistic constraints.
Looking ahead, I aim to connect molecular-scale interface control with device- and architecture-level engineering. By combining interface chemistry, electrical and optical characterization, and electrothermal modelling, I seek to establish predictive design principles for scalable two-dimensional transistors and integrated circuits.
Detailed publications:
[1] Y. Zhu, Z. Zhang, Y. Wang, S. Sarkar, Y. Li, H. Yan, L. Ishibe-Veiga, A. Bagri, Z. J. Yang, H. Ramsden, G. Eda, R. L. Z. Hoye, Y. Wang, and M. Chhowalla, “Effect of Substrate on Sulfur Vacancy Defect-Mediated Photoluminescence in Two-Dimensional MoS₂,” The Journal of Physical Chemistry C 129, 8294–8302 (2025).
DOI: 10.1021/acs.jpcc.4c08491
[2] K. K. Paul, C. Chosy, S. Sarkar, Z. Li, H. Yan, Y. Wang, L. Loh, L. Liu, H. Y. Jeong, S. D. Stranks, Y. Wang, and M. Chhowalla, “High-Efficiency WSe₂ Photovoltaics Enabled by Ultra-Clean van der Waals Contacts,” arXiv preprint (2025).
arXiv:2506.14733
[3] M. A. Ghani, S. Sarkar, Y. Li, Y. Wang, K. Watanabe, T. Taniguchi, Y. Wang, and M. Chhowalla, “Ferroelectric Field-Effect Transistors Based on Two-Dimensional CuInP₂S₆ and Graphene Heterostructures,” MRS Energy & Sustainability 11, 616–623 (2024).
DOI: 10.1557/s43581-024-00109-y
[4] M.-H. Kim, K. Sharma, S. Zhang, and Y. Wang*, “AI for Science with GPT-6 Astra: Thermal Design and Electrothermal Analysis of 2D CFET,” arXiv preprint (2026).
arXiv:2609.17123
Devices for Energy-efficient Computing
In classical von Neumann computers, the primary inefficiency stems from the data transfer between separate processing and memory units. Developing complex material systems that process and store information at the nanoscale beyond Moore’s law can enhance energy efficiency in computing devices among the computing technologies that operate at high speeds with low energy consumption, non-volatility, and affordability. This challenge can be mitigated by integrating these units through innovative material design. Unlike electronic engineers who focus on improving circuit design on silicon wafers, I create energy-efficient device architectures using functional molecules on two-dimensional (2D) semiconductors. These semiconductors are poised to surpass the limitations of silicon in electronic devices.
Logic-in-Memory Architectures
To overcome the von Neumann bottleneck, I explored logic-in-memory architectures, which merge logic and memory units to enhance data encoding and retrieval efficiency. Using 2D semiconductors like transition metal dichalcogenides (TMDs), I integrated memory functionality through supramolecular lattices with memory capabilities. This method employs photochromic molecules such as azobenzene, enabling simultaneous read, compute, and write operations.
Neuromorphic Architectures
In neuromorphic computing, I developed an electrochemical-driven approach to simulate short-term potentiation (STP) and long-term plasticity (LTP) within a single synapse. This involves electrochemical deposition of charged molecules (ferrocene/ferrocenium) on 2D materials, creating a compact artificial synapse with 16 levels of synaptic memory, showcasing high energy efficiency and data manipulation density.
Detailed publications:
[1] Y. Wang, B. Han, M. Mayor, P. Samorì, “Opto-electrochemical synaptic memory in supramolecularly engineered Janus 2D MoS2”, Adv. Mater. 2023, 202307359.
DOI: 10.1002/adma.202307359
[2] Y. Wang, D. Iglesias, S. M. Gali, D. Beljonne, P. Samorì, “Light-Programmable Logic-in-Memory in 2D Semiconductors Enabled by Supramolecular Functionalization: Photoresponsive Collective Effect of Aligned Molecular Dipoles”, ACS Nano, 2021, 15, 13732–13741.
DOI: 10.1021/acsnano.1c05167
Chiral Nanomaterials
Chiral materials possess a unique property called chirality, where their structure and properties differ based on their orientation in space. This means they cannot be superimposed on their mirror image, similar to how left and right hands are distinct. These materials play a crucial role in various scientific fields, including chemistry, physics, and biology, due to their ability to interact differently with polarized light and other chiral substances. Applications of chiral materials range from pharmaceuticals, where they influence drug efficacy, to advanced technologies like quantum computing and optoelectronics, where their unique properties enable innovative device functionalities.
My research illustrates the discovery of tunable dimensionality of chirality- from 3D to 2D, in atomically thin film transition metal dichalcogenides. The collapse of dimensionality brings along an ultra-high chirality and ultra-sensitive optoelectronic response to distinguish quantum states of photons and record anomalous quantum effects such as vanishing of Cotton effect.
Detailed publications:
[1] Y. Wang, Y. Zhu, H. Yan, Y. Li, Y. Wang, M. Chhowalla, “Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light”, 2024, ArXiv (Corresponding Author)
DOI: 10.48550/arXiv.2404.06555